Resume
Researcher
Chung-Kwei
Lin
Professor at Taipei Medical University
School of Dental Technology
Taipei, Taiwan
Citations
-
Contact Info
Resume
Work Experience
主任
臺北醫學大學口腔醫學院數位口腔科技研究中心 March 2017 - Present
Taipei, Taiwan
教授
臺北醫學大學牙體技術學系 February 2012 - Present
Taipei, Taiwan
主任
臺北醫學大學牙體技術學系系 February 2012 - January 2018
Taipei, Taiwan
教授
逢甲大學材料科學與工程學系 August 2001 - January 2012
Taichung, Taiwan
教授兼系主任
逢甲大學材料科學與工程學系 August 2004 - July 2007
Taichung, Taiwan
組長
逢甲大學教授兼研發處研推組 August 2002 - July 2004
Taichung, Taiwan
專任副教授
逢甲大學材料科學與工程學系 August 1998 - July 2001
Taichung, Taiwan
客座副教授
海洋大學材料工程研究所 August 1996 - July 1998
Keelung, Taiwan
Education
美國紐約州立大學石溪分校
New York 1995
博士 , 材料科學與工程學系
大同大學
Taiwan 1991
碩士 , 材料系
臺灣大學
Taiwan 1985
學士 , 地質學系
Project
Improvement in the characteristics of GaN-based light-emitting diodes by inserting A1GaN-GaN short-period superlattices in GaN underlayers
August 2006

Abstract

We report the influence of short-period superlattice (SPSL)-inserted structures in the underlying undoped GaN on the characteristics of GaN-based light-emitting diodes (LEDs). The measurements of current-voltage (I-V) curves indicate that GaN-based LEDs having pseudomorphic Al<sub>0.3</sub>Ga<sub>0.7</sub>N(2 nm)-GaN(2 nm) SPSL-inserted structures exhibit improvements in device characteristics with the best LED being inserted with two sets of five-pair Al<sub>0.3</sub>Ga<sub>0.7</sub>N(2 nm)-GaN(2 nm) SPSL structure. Based upon the results of etch pit counts, double-crystal X-ray diffraction measurements and transmission electron microscopic observations of the GaN-based LEDs, it was found that the Al<sub>0.3</sub>Ga<sub>0.7</sub>N(2 nm)-GaN(2 nm) SPSL-inserted structures tended to serve as threading dislocation filters in the LEDs so that the improved I-V characteristics were achieved.

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